GaN-based micro-LEDs typically suffer from a size-dependent efficiency due to the relatively long carrier lifetime and sidewall-related recombination effects. We demonstrate that for red-emitting Eu-doped GaN, sidewall-related recombination is hardly an issue for emission efficiency. We determine the photoluminescence quantum efficiency (PL QE) of Eu-related emission as a function of the size of square structures ranging from 3 to 192 µm. With the support of finite-difference time-domain simulations, we show that the light extraction efficiency and material losses are responsible for the decrease in PL QE for large sizes. For sizes smaller than 24 µm, there is an influence of the sidewall-related non-radiative recombination of carriers on the PL QE; however, it is only minor as a result of the limited carrier diffusion lengths in the Eu-doped material. These properties combined with the high efficiency of luminescence indicate the potential of this material for micro-LED applications.
